Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi

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POWER MOS V?

POWER MOS V? POWER MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. F

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MICROSEMI

美高森美

isc N-Channel MOSFET Transistor

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

無錫固電

POWER MOS V?

POWER MOS V? POWER MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. F

文件：354.91 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

POWER MOS V?

Microchip

微芯科技

MOSFET

ROHS

Microchip

微芯科技