首頁 >APT20M45BVRG>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
APT20M45BVRG | POWER MOS V? POWER MOS V? POWER MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. F 文件：354.91 Kbytes 頁數(shù)：4 Pages | MICROSEMI 美高森美 | MICROSEMI | |
APT20M45BVRG | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.045Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：337.32 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
APT20M45BVRG | MOSFET ROHS | Microchip 微芯科技 | Microchip | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. 文件：97.7 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast 文件：95.12 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
SMD Current Limiting Diodes 文件：143.4 Kbytes 頁數(shù)：2 Pages | DIOTEC 德歐泰克 | DIOTEC |
詳細參數(shù)
- 型號：
APT20M45BVRG
- 功能描述：
MOSFET N-CH 200V 56A TO-247
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
POWER MOS V®
- 標準包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
1825+ |
TO247-3 |
3031 |
原裝正品 可含稅交易 |
詢價 | ||
MICROSEMI/美高森美 |
25+ |
TO247-3 |
12500 |
全新原裝現(xiàn)貨,假一賠十 |
詢價 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
MICROSEMI/美高森美 |
21+ |
TO247-3 |
120000 |
長期代理優(yōu)勢供應(yīng) |
詢價 | ||
MICROSEMI |
25+ |
TO-247 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
MICROSEMI |
21+ |
TO/247-3 |
3031 |
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢! |
詢價 | ||
MICROSEMI/美高森美 |
24+ |
GPS |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
MICROSEMI/美高森美 |
23+ |
TO247-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MICROSEMI/美高森美 |
22+ |
TO247-3 |
3800 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | ||
MICROSEMI |
25+ |
5 |
公司優(yōu)勢庫存 熱賣中! |
詢價 |
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