絲印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50m? @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 頁數(shù)：4 Pages

HAOHAI

浩海電子

絲?。?strong>A2SHB；Package：SOT-23；N-Channel 1.25-W, 2.5-V MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

文件：45.45 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

絲印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

文件：1.45725 Mbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

絲?。?strong>A2SHB；Package：SOT-23；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：832.45 Kbytes 頁數(shù)：3 Pages

CHENDA

辰達半導(dǎo)體

絲?。?strong>A2SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：765.18 Kbytes 頁數(shù)：3 Pages

UMW

友臺半導(dǎo)體

絲?。?strong>A2SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：540.78 Kbytes 頁數(shù)：3 Pages

EVVOSEMI

翊歐

絲印：A2SHB；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.74159 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

絲?。?strong>A2SHB；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.54741 Mbytes 頁數(shù)：3 Pages

DOINGTER

杜因特

絲印：A2SHB；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

文件：503.56 Kbytes 頁數(shù)：7 Pages

HMSEMI

華之美半導(dǎo)體

絲?。?strong>A2SHB；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：886.97 Kbytes 頁數(shù)：7 Pages

HMSEMI

華之美半導(dǎo)體