N-Channel Enhancement Mode Field Effect Transistor

Features ? Halogen free available upon request by adding suffix -HF ? 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Lead free product is acquired ? SOT-23 Package ? Marking Code: S2 ? Epo

文件：168.38 Kbytes 頁數(shù)：5 Pages

MCC

20 V N-Channel Enhancement Mode MOSFET

VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A

文件：4.06584 Mbytes 頁數(shù)：4 Pages

HTSEMI

金譽(yù)半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Feature ● 16V/3.6A, RDS(ON) = 100mΩ(MAX) @VGS = 4.5V. RDS(ON) = 140mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management Portable Equipment a

文件：413.07 Kbytes 頁數(shù)：6 Pages

ZPSEMIZP Semiconductor

至尚臻品

絲?。?a target="_blank" title="Marking" href="/a2shb/marking.html">A2SHB；Package：SOT-23；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：832.45 Kbytes 頁數(shù)：3 Pages

CHENDA

辰達(dá)半導(dǎo)體

N- CHANNEL MOSFET in a SOT-23 Plastic Package

DESCRIPTIONS N- CHANNEL MOSFET in a SOT-23 Plastic Package. FEATURES Super high dense cell design for low RDS(ON),SOT-23 package. APPLICATIONS Battery management,High speed switch,low power DC to DC converter.

文件：468.33 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

N-Channel Enhancement MOSFET

N-Channel Enhancement MOSFET ■ FEATURES TrenchFET Power MOSFET

文件：285.33 Kbytes 頁數(shù)：1 Pages

YIXIN

壹芯微

Plastic-Encapsulate Mosfets

FEATURES ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Case Material: Molded Plastic.

文件：272.55 Kbytes 頁數(shù)：3 Pages

HOTTECH

合科泰

Plastic-Encapsulate MOSFETS

文件：1.16669 Mbytes 頁數(shù)：6 Pages

CHENDA

辰達(dá)半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

文件：266.42 Kbytes 頁數(shù)：5 Pages

MCC

Small Signal MOSFETS

MCC

美微科