絲印：8205；Package：SOT23-6L；20V,4A Dual N-Channel MOSFET

文件：330.96 Kbytes 頁數(shù)：7 Pages

E-CMOS

飛虹高科

絲?。?strong>8205；Package：SOT23-6；N-channel Double MOSFET

文件：1.48586 Mbytes 頁數(shù)：5 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲?。?strong>8205；Package：SOT-23-6；20V Dual N-Channel MOSFET

文件：531.63 Kbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?strong>8205；Package：SOT-23-6L；Dual N-Channel, 20V, 5.2A, Power MOSFET

文件：3.22313 Mbytes 頁數(shù)：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?strong>8205；Package：SOT-23-6L；Dual N-Channel, 20V, 5.2A, Power MOSFET

文件：3.22313 Mbytes 頁數(shù)：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?strong>8205；Package：TSSOP-8L；Dual N-Channel, 20V, 5.7A, Power MOSFET

文件：2.34002 Mbytes 頁數(shù)：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲印：8205；Package：TSSOP-8L；Dual N-Channel, 20V, 5.7A, Power MOSFET

文件：2.34002 Mbytes 頁數(shù)：8 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

絲?。?a target="_blank" title="Marking" href="/8205a/marking.html">8205A；Package：TSSOP8；20V, 18m2, 6A, N-Channel MOSFET

Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V

文件：3.05317 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/8205a/marking.html">8205A；Package：SOT23-6；Dual N-Channel Enhancement Power Mosfet

Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications

文件：1.34742 Mbytes 頁數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/8205f/marking.html">8205F；Package：SOT23-6；N-channel Double MOSFET in a SOT23-6 Plastic Package.

Features advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V.

文件：472.95 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際