| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>8205;Package:SOT23-6L;20V,4A Dual N-Channel MOSFET 文件:330.96 Kbytes 頁數(shù):7 Pages | E-CMOS 飛虹高科 | E-CMOS | ||
絲?。?strong>8205;Package:SOT23-6;N-channel Double MOSFET 文件:1.48586 Mbytes 頁數(shù):5 Pages | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
絲?。?strong>8205;Package:SOT-23-6;20V Dual N-Channel MOSFET 文件:531.63 Kbytes 頁數(shù):4 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
絲?。?strong>8205;Package:SOT-23-6L;Dual N-Channel, 20V, 5.2A, Power MOSFET 文件:3.22313 Mbytes 頁數(shù):8 Pages | WILLSEMIWill Semiconductor Co.,Ltd. 韋爾股份上海韋爾半導(dǎo)體股份有限公司 | WILLSEMI | ||
絲印:8205;Package:SOT-23-6L;Dual N-Channel, 20V, 5.2A, Power MOSFET 文件:3.22313 Mbytes 頁數(shù):8 Pages | WILLSEMIWill Semiconductor Co.,Ltd. 韋爾股份上海韋爾半導(dǎo)體股份有限公司 | WILLSEMI | ||
絲印:8205;Package:TSSOP-8L;Dual N-Channel, 20V, 5.7A, Power MOSFET 文件:2.34002 Mbytes 頁數(shù):8 Pages | WILLSEMIWill Semiconductor Co.,Ltd. 韋爾股份上海韋爾半導(dǎo)體股份有限公司 | WILLSEMI | ||
絲?。?strong>8205;Package:TSSOP-8L;Dual N-Channel, 20V, 5.7A, Power MOSFET 文件:2.34002 Mbytes 頁數(shù):8 Pages | WILLSEMIWill Semiconductor Co.,Ltd. 韋爾股份上海韋爾半導(dǎo)體股份有限公司 | WILLSEMI | ||
絲?。?a target="_blank" title="Marking" href="/8205a/marking.html">8205A;Package:TSSOP8;20V, 18m2, 6A, N-Channel MOSFET Features ◆20V MOSFET technology ◆Low on-state resistance ◆Fast switching ◆ Vgs+12V 文件:3.05317 Mbytes 頁數(shù):6 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
絲?。?a target="_blank" title="Marking" href="/8205a/marking.html">8205A;Package:SOT23-6;Dual N-Channel Enhancement Power Mosfet Features VDS = 20V,ID =6A RDS(ON),19.5mΩ(Typ) @ VGS =4.5V RDS(ON), 25mΩ(Typ) @ VGS =2.5V Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications 文件:1.34742 Mbytes 頁數(shù):6 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/8205f/marking.html">8205F;Package:SOT23-6;N-channel Double MOSFET in a SOT23-6 Plastic Package. Features advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltages as low as 2.5V. 文件:472.95 Kbytes 頁數(shù):7 Pages | RECTRON 麗正國際 | RECTRON |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
E-MOS |
2022+ |
SOT-23-6 |
40000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
E-CMOS |
23+ |
TSSOP-8 |
121212 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
E-MOS |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
E-MOS |
24+ |
SOP8 |
60000 |
詢價(jià) | |||
E-MOS |
20+ |
TO-263 |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) |
相關(guān)芯片絲印
更多- TF8205A_V01
- 8205A
- 8205A
- YJS8205B
- RM8205F
- UT8205AG-AG6-R
- ISL28207FRTZ
- F8208SPK
- 1SMA5920B
- 1SMA5920BT3G
- TLS820D0ELV33
- TLS820D2ELVSE
- TLS820F3ELV33
- TPRH1207M-821M
- SD5D25-821M
- MC13821
- BWVS00808040821M00
- 7447720821
- SD5D12-821M
- SD5D20-821M
- TPRH1209-821M
- SD5D14-821M
- SD5D14-821M
- DRV8210DRLR
- DRV8210DRLR.A
- FKCC8211
- DRV8212DRLR
- DRV8213RTER
- ISL28213FUZ
- DRV8214RTER
- ISL28214FUZ-T7
- BQ298215RUGR
- UPC8215TU-E2
- BQ298215RUGR
- BQ298215RUGR
- BQ298216RUGR
- BQ298216RUGR
- BQ298217RUGR
- BQ298217RUGR
- ISL28217FUZ
- UPC8218T5A-E1
- BQ298218RUGR
- ISL78219ARTZ
- CBM8821ABS5
- SZ1SMA5921BT3G
相關(guān)庫存
更多- TF8205_V01
- TPM8205AT8
- YFW8205A-21TS
- RU8205BC6
- UT8205AG-AG6-R
- YFW8205LI
- ISL28207FUZ
- ISL28208FUZ
- SZ1SMA5920BT3G
- TLS820B2ELVSE
- TLS820D0ELV50
- TLS820F1ELV50
- TLS820F3ELV50
- EC5821NNB2R
- CBM8821AST5
- PJQ1821_R1_00001
- BWVS00808040821T00
- SD5D12-821M
- TPRH1205M-821M
- TPRH10D50-821
- SD5D20-821M
- SD5D18-821M
- SD5D18-821M
- DRV8210DRLR
- DRV8210DRLR.B
- SI9182DH-12-T1
- DRV8213DSGR
- DRV8213DSGR
- ISL28213FUZ-T7
- ISL28214FUZ
- SI9182DH-15-T1
- BQ298215RUGR
- UPC8215TU-E2-A
- DRV8215RTER
- BQ298216RUGR
- BQ298216RUGR
- ISL28217FRTBZ
- UPC8217TU-E2
- BQ298217RUGR
- SI9182DH-18-T1
- BQ298218RUGR
- ISL28218FUZ
- ISL78219ARTZ-T
- 1SMA5921B
- 1SMA5921BT3G

