絲印：8205B；Package：SOT23-6；N-Channel Advanced Power MOSFET

文件：339.28 Kbytes 頁數(shù)：8 Pages

RUICHIPS

銳駿半導(dǎo)體

絲?。?strong>8205B；Package：SOT-236L；N-Channel Enhancement Mode Field Effect Transistor

文件：577.47 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package Dual N-Channel MOSFET APPLICATION z Battery Protection z Load Switch z Power Management

文件：3.94332 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Channel enhancement mode power MOSFET

Description Pinout Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C It features fast switching, ultra-low on-resistance and high cost performance. 8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching. 2.

文件：532.97 Kbytes 頁數(shù)：7 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

20V N-Channel Enhancement MOS FET

文件：296.31 Kbytes 頁數(shù)：4 Pages

FUMAN

富滿微