7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：145.23 Kbytes 頁數(shù)：7 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7.4A, 600V N-CHANNEL POWER MOSFET

文件：193.88 Kbytes 頁數(shù)：6 Pages

UTC

友順

N-CHANNEL POWER MOSFET

文件：2.48283 Mbytes 頁數(shù)：8 Pages

SUNMATE

森美特

絲印：D2PAK；Package：TO-263；N-Channel 6 50V (D-S) Power MOSFET

文件：1.10604 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

7/7.4A, 600V?N-CHANNEL POWER MOSFET

The UTC?7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state?resistance and have a high rugged avalanche characteristics. This?power MOSFET is usually used at high speed switching applications in switching powe ? RDS(ON) = 1.0? @VGS = 10V (7N60) \n? Ultra Low Gate Charge (Typical 29 nC )?? \n? Fast Switching Capability \n? Improved dv/dt Capability, High Ruggedness;

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 頁數(shù)：7 Pages

UTC

友順

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：204.5 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 頁數(shù)：11 Pages

INTERSIL