絲?。?strong>5N6；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：496.12 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>5N6；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.07 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/5n65m6/marking.html">5N65M6；Package：DPAK；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a DPAK package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well

文件：801.56 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：5N65M6；Package：TO-220FP；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a TO-220FP package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well

文件：700.25 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/5n6l140/marking.html">5N6L140；Package：PG-TSDSON-8-32；OptiMOS??5 Power Transistor

文件：836.77 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲印：5N6L050；Package：PG-TSDSON-8-33；OptiMOS??5 Power-Transistor

文件：750.29 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/5n650/marking.html">5N650；Package：TO-251；N-Channel Super Junction Power MOSFET

文件：525.25 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲印：5N650；Package：TO-252；N-Channel Super Junction Power MOSFET

文件：525.25 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/5n60at/marking.html">5N60AT；Package：TO-220AB；5A 600V N-channel enhanced field effect transistor

文件：1.0671 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風微

絲?。?a target="_blank" title="Marking" href="/5n60af/marking.html">5N60AF；Package：TO-220F；5A 600V N-channel enhanced field effect transistor

文件：1.0671 Mbytes 頁數(shù)：7 Pages

YFWDIODE

佑風微