絲印：5N65M6；Package：DPAK；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a DPAK package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well

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STMICROELECTRONICS

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N-channel 650 V, 1.15 Ohm typ., 4 A MDmesh M6 Power MOSFET in a DPAK package

The new MDmesh? M6 technology incorporates the most recent advancements to the well-knownand consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previousgeneration of MDmesh devices through its new M6 technology, which combines excellentRDS(on) * area improvement with one of t ? Reduced switching losses\n? Low gate input resistance? 100% avalanche tested\n? Zener-protected;

ST

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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a TO-220FP package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well

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N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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