| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：5N6；WE-KI SMT Wire Wound Ceramic Inductor General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging) 文件：496.12 Kbytes 頁(yè)數(shù)：6 Pages | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍爾特伍爾特集團(tuán) | WURTH | ||
絲?。?strong>5N6；WE-KI SMT Wire Wound Ceramic Inductor General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging) 文件：495.07 Kbytes 頁(yè)數(shù)：6 Pages | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍爾特伍爾特集團(tuán) | WURTH | ||
絲?。?a target="_blank" title="Marking" href="/5n65m6/marking.html">5N65M6；Package：DPAK；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a DPAK package Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well 文件：801.56 Kbytes 頁(yè)數(shù)：15 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲印：5N65M6；Package：TO-220FP；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh? M6 Power MOSFET in a TO-220FP package Features ? Reduced switching losses ? Lower RDS(on) x area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh? M6 technology incorporates the most recent advancements to the well 文件：700.25 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/5n6l140/marking.html">5N6L140；Package：PG-TSDSON-8-32；OptiMOS??5 Power Transistor 文件：836.77 Kbytes 頁(yè)數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/5n6l050/marking.html">5N6L050；Package：PG-TSDSON-8-33；OptiMOS??5 Power-Transistor 文件：750.29 Kbytes 頁(yè)數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：5N650；Package：TO-251；N-Channel Super Junction Power MOSFET 文件：525.25 Kbytes 頁(yè)數(shù)：8 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲印：5N650；Package：TO-252；N-Channel Super Junction Power MOSFET 文件：525.25 Kbytes 頁(yè)數(shù)：8 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/5n60at/marking.html">5N60AT；Package：TO-220AB；5A 600V N-channel enhanced field effect transistor 文件：1.0671 Mbytes 頁(yè)數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
絲印：5N60AF；Package：TO-220F；5A 600V N-channel enhanced field effect transistor 文件：1.0671 Mbytes 頁(yè)數(shù)：7 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
WURTH |
25+ |
電感器 |
2000 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
WURTH/伍爾特 |
23+ |
SOP-8 |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
Würth Elektronik |
25+ |
非標(biāo)準(zhǔn) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
WURTH/伍爾特 |
2447 |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
WURTH/伍爾特 |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
WE |
2016+ |
SMD |
39000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
WE |
25+23+ |
0805 |
62380 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
WURTH/伍爾特 |
24+ |
0805 |
6666 |
全新新貨村田TDK太友數(shù)量均有多電話咨詢 |
詢價(jià) | ||
WURTH/伍爾特 |
20+ |
電感器 |
682000 |
電感原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
WE |
2023+ |
O805 |
48000 |
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) |
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