絲?。?strong>4N7；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.79 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：DFN5X6-8L；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：412.95 Kbytes 頁數(shù)：9 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower driving requirements. 100% Avalanche Tested ROHS compliant

文件：624.41 Kbytes 頁數(shù)：8 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.07569 Mbytes 頁數(shù)：10 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.07569 Mbytes 頁數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.07569 Mbytes 頁數(shù)：10 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.07569 Mbytes 頁數(shù)：10 Pages

RECTRON

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絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：TO-251；N-Channel Super Junction Power MOSFET

文件：500.7 Kbytes 頁數(shù)：8 Pages

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絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：TO-252；N-Channel Super Junction Power MOSFET

文件：500.7 Kbytes 頁數(shù)：8 Pages

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4A, 700V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 4N70-TC4 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

文件：698.44 Kbytes 頁數(shù)：8 Pages

UTC

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