| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>4N7；WE-KI SMT Wire Wound Ceramic Inductor General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging) 文件：495.79 Kbytes 頁數(shù)：6 Pages | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍爾特伍爾特集團(tuán) | WURTH | ||
絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：DFN5X6-8L；N-Channel Super Junction Power MOSFET Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant 文件：412.95 Kbytes 頁數(shù)：9 Pages | RECTRON 麗正國際 | RECTRON | ||
絲印：4N700；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower driving requirements. 100% Avalanche Tested ROHS compliant 文件：624.41 Kbytes 頁數(shù)：8 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.07569 Mbytes 頁數(shù)：10 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.07569 Mbytes 頁數(shù)：10 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/4n70/marking.html">4N70；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.07569 Mbytes 頁數(shù)：10 Pages | RECTRON 麗正國際 | RECTRON | ||
絲印：4N70；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test 文件：1.07569 Mbytes 頁數(shù)：10 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：TO-251；N-Channel Super Junction Power MOSFET 文件：500.7 Kbytes 頁數(shù)：8 Pages | RECTRON 麗正國際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/4n700/marking.html">4N700；Package：TO-252；N-Channel Super Junction Power MOSFET 文件：500.7 Kbytes 頁數(shù)：8 Pages | RECTRON 麗正國際 | RECTRON | ||
4A, 700V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 4N70-TC4 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the 文件：698.44 Kbytes 頁數(shù)：8 Pages | UTC 友順 | UTC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
WE |
2016+ |
SMD |
24000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
WE |
25+23+ |
0805 |
62381 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
WURTH |
06+ |
SMD |
18000 |
原廠原裝倉庫現(xiàn)貨,歡迎咨詢 |
詢價(jià) | ||
PANASONIC/松下 |
23+ |
504 |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Würth Elektronik |
25+ |
0805(2012 公制) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
WURTH/伍爾特 |
2450+ |
6540 |
只做原裝正品現(xiàn)貨或訂貨!終端客戶免費(fèi)申請(qǐng)樣品! |
詢價(jià) | |||
WE |
24+ |
O8O5 |
80000 |
只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價(jià) | ||
W-E |
21+ |
SMD0805 |
81120 |
原裝現(xiàn)貨,樣品可售 |
詢價(jià) | ||
WURTH/伍爾特 |
20+ |
電感器 |
682000 |
電感原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
WE |
23+ |
O805 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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