絲印：4N8；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 頁數(shù)：17 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：DPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

絲印：4N80K5；Package：TO-220FP；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

絲印：4N80K5；Package：TO-220；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/4n80k5/marking.html">4N80K5；Package：IPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導體

N-Channel Power MOSFET

文件：398.61 Kbytes 頁數(shù)：8 Pages

NELLSEMI

尼爾半導體

isc N-Channel MOSFET Transistor

文件：319.64 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Fast Switching Speed

文件：49.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：165.63 Kbytes 頁數(shù)：6 Pages

UTC

友順

4.0A, 800V N-CHANNEL POWER MOSFET

文件：201.52 Kbytes 頁數(shù)：6 Pages

UTC

友順