| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 80 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 1.2V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications 文件：323.74 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/d2137a/marking.html">D2137A；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Automatic Insertion with Radial Taping 文件：1.08001 Mbytes 頁數(shù)：3 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features ? High forward current transfer ratio hFE ? High-speed switching ? Allowing automatic insertion with radial taping 文件：61.6 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type Darlington(For power amplification) ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing supply with the radial taping 文件：61.44 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type Darlington(For power amplification) ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing supply with the radial taping 文件：61.44 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features ? High forward current transfer ratio hFE ? High-speed switching ? Allowing automatic insertion with radial taping 文件：61.6 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification) For high-current amplification ratio, power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing supply with the radial taping 文件：50.91 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN Triple Diffused Type (Darlington) 文件：148.64 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon NPN Triple Diffused Type (Darlington) 文件：148.64 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
isc Silicon NPN Power Transistor 文件：272.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
貼片封裝
- 極限工作電壓：
110V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號：
BDW21C,BDX11,BDY19,BDY74,2N3055,2N3442,2N3773,2N5632,2N5633,3DA74C,
- 最大耗散功率：
100W
- 放大倍數(shù)：
- 圖片代號：
E-44
- vtest：
110
- htest：
999900
- atest：
10
- wtest：
100
技術(shù)參數(shù)
- PCM(W)：
1.25
- IC(A)：
3
- VCBO(V)：
60
- VCEO(V)：
60
- VEBO(V)：
6
- hFEMin：
40
- hFEMax：
250
- hFE@VCE(V)：
4
- hFE@IC(A)：
1
- VCE(sat)(V)：
1.2
- VCE(sat)\u001E@IC(A)：
3
- VCE(sat)\u001E@IB(A)：
0.375
- Package：
TO-126
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
TOS |
23+ |
TO |
20000 |
正品原裝貨價格低 |
詢價 | ||
PANASONIC |
24+/25+ |
1000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
ROHM |
24+ |
原廠封裝 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
TOSHIBA |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
TOSHIBA |
25+ |
TO-126 |
1800 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
松下PANASO |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
PANASONIC |
24+ |
TO-220F |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
MATSUSHITA |
23+ |
NA |
998 |
專做原裝正品,假一罰百! |
詢價 | ||
PANASONI |
25+23+ |
TO220 |
24916 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 |
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