| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SD2136 | Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 ■ Features ? High forward current transfer ratio hFE which has satisfactory linearity. ? Low collector-emitter saturation voltage VCE(sat) ? Allowing supply with the radial taping 文件：86.32 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | |
2SD2136 | Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 ■ Features ? High forward current transfer ratio hFE which has satisfactory linearity ? Low collector-emitter saturation voltage VCE(sat) ? Allowing automatic insertion with radial taping 文件：82.07 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | |
2SD2136 | POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. 文件：114.96 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | |
2SD2136 | NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages | SECOS 喜可士 | SECOS | |
2SD2136 | 絲印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 文件：1.30854 Mbytes 頁數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ | |
2SD2136 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 文件：126.94 Kbytes 頁數(shù)：1 Pages | WINNERJOIN 永而佳 | WINNERJOIN | |
2SD2136 | isc Silicon NPN Power Transistor 文件：272.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
2SD2136 | TO-126 Plastic-Encapsulate Transistors 文件：775.11 Kbytes 頁數(shù)：4 Pages | JIANGSU 長電科技 | JIANGSU | |
2SD2136 | POWER TRANSISTOR 文件：168.47 Kbytes 頁數(shù)：4 Pages | UTC 友順 | UTC | |
2SD2136 | POWER TRANSISTOR 文件：169.98 Kbytes 頁數(shù)：4 Pages | UTC 友順 | UTC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_輸出極 （E）_開關(guān)管 （S）
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
3A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD177,BD179,BD189,2SD794,2SD794A,
- 最大耗散功率：
1.5W
- 放大倍數(shù)：
- 圖片代號：
A-70
- vtest：
60
- htest：
999900
- atest：
3
- wtest：
1.5
技術(shù)參數(shù)
- PCM(W)：
1.25
- IC(A)：
3
- VCBO(V)：
60
- VCEO(V)：
60
- VEBO(V)：
6
- hFEMin：
40
- hFEMax：
250
- hFE@VCE(V)：
4
- hFE@IC(A)：
1
- VCE(sat)(V)：
1.2
- VCE(sat)\u001E@IC(A)：
3
- VCE(sat)\u001E@IB(A)：
0.375
- Package：
TO-126
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MATSUSHITA |
24+/25+ |
612 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
panasonic |
24+ |
DIP-3 |
306834 |
詢價 | |||
MAT |
24+ |
原廠封裝 |
1700 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MATSUSHITA |
23+ |
NA |
998 |
專做原裝正品,假一罰百! |
詢價 | ||
長電 |
25+23+ |
TO-126 |
23660 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
CJ/長電 |
21+ |
TO-126C |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票 |
詢價 | ||
PANASONIC/松下 |
23+ |
MT-3-A1 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CJ/長電 |
26+ |
原廠原封裝 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 | ||
PANASON |
1032+ |
TO-126 |
90 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
PANASONIC/松下 |
22+ |
MT-3-A1 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 |
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