| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 文件：126.94 Kbytes 頁數(shù)：1 Pages | WINNERJOIN 永而佳 | WINNERJOIN | ||
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages | SECOS 喜可士 | SECOS | ||
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages | SECOS 喜可士 | SECOS | ||
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current 文件：258.62 Kbytes 頁數(shù)：2 Pages | SECOS 喜可士 | SECOS | ||
絲印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 文件：1.30854 Mbytes 頁數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
絲?。?a target="_blank" title="Marking" href="/2sd2137/marking.html">2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 文件：1.025079 Mbytes 頁數(shù)：3 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping 文件：55.11 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r 文件：54.7 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping 文件：55.11 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r 文件：54.7 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
貼片封裝
- 極限工作電壓：
110V
- 最大電流允許值：
10A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號：
BDW21C,BDX11,BDY19,BDY74,2N3055,2N3442,2N3773,2N5632,2N5633,3DA74C,
- 最大耗散功率：
100W
- 放大倍數(shù)：
- 圖片代號：
E-44
- vtest：
110
- htest：
999900
- atest：
10
- wtest：
100
技術(shù)參數(shù)
- PCM(W)：
1.25
- IC(A)：
3
- VCBO(V)：
60
- VCEO(V)：
60
- VEBO(V)：
6
- hFEMin：
40
- hFEMax：
250
- hFE@VCE(V)：
4
- hFE@IC(A)：
1
- VCE(sat)(V)：
1.2
- VCE(sat)\u001E@IC(A)：
3
- VCE(sat)\u001E@IB(A)：
0.375
- Package：
TO-126
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
TOS |
23+ |
TO |
20000 |
正品原裝貨價格低 |
詢價 | ||
PANASONIC |
24+/25+ |
1000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
ROHM |
24+ |
原廠封裝 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
TOSHIBA |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
TOSHIBA |
25+ |
TO-126 |
1800 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
松下PANASO |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
PANASONIC |
24+ |
TO-220F |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
MATSUSHITA |
23+ |
NA |
998 |
專做原裝正品,假一罰百! |
詢價 | ||
PANASONI |
25+23+ |
TO220 |
24916 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 |
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