| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Epitaxial Planar PNP Silicon Transistors Low collector saturation voltage: Voeea=-0.5V (Typj (lc/lB 一 一 2A/ 一 0.2AJ Complementary pair with 2SD1760F5. 文件：175.71 Kbytes 頁數(shù)：3 Pages | ROHM 羅姆 | ROHM | ||
Epitaxial planar type NPN silicon transistor Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor 文件：81.97 Kbytes 頁數(shù)：3 Pages | ROHM 羅姆 | ROHM | ||
Power Transistor (50V, 3A) Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor 文件：81.97 Kbytes 頁數(shù)：3 Pages | ROHM 羅姆 | ROHM | ||
Epitaxial Planar PNP Silicon Transistor @ Features 1) Large collector power dissipation: Po=30W (Te=25°C) 2) Wide ASO. 3) Complementary pair with 25D1761. 4) Easily insulated from the heat dis- sipation plate as the fin is molded. 文件：279.59 Kbytes 頁數(shù)：3 Pages | ROHM 羅姆 | ROHM | ||
TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A 2) Excellent current characteristics of DC current gain. 3) Large collector power dissipation: PC=30W(TC=25℃) 4) Complementary pair with 2SB1187 文件：63.79 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220Fa package ? Low collector saturation voltage ? Complement to type 2SB1187 ? Wide safe operating area APPLICATIONS ? For low frequency power amplifier applications 文件：80.16 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
TO-220F Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ? Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A ? Excellent Current Characteristics of DC Current Gain. ? Large Collector Power Dissipation: PC=30W(TC=25℃) ? Complementary Pair with 2SB1187 文件：1.74428 Mbytes 頁數(shù)：3 Pages | JIANGSU 長電科技 | JIANGSU | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220Fa package ? Low collector saturation voltage ? Complement to type 2SB1187 ? Wide safe operating area APPLICATIONS ? For low frequency power amplifier applications 文件：111.16 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications 文件：110.91 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | ||
絲?。?a target="_blank" title="Marking" href="/2sd1762/marking.html">2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complements the 2SB1185 文件：1.3627 Mbytes 頁數(shù)：4 Pages | DGNJDZ 南晶電子 | DGNJDZ |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
HI.UEB_HI.BETA
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SC2665,2SD1207,2SD1265,
- 最大耗散功率：
1W
- 放大倍數(shù)：
β>800
- 圖片代號：
A-70
- vtest：
60
- htest：
999900
- atest：
2
- wtest：
1
技術(shù)參數(shù)
- VCEO (V)：
60
- hFE min.：
800
- hFE max.：
3200
- Pc (W)：
1
- Production Status：
Non-promotion
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ROHM |
24+ |
30000 |
詢價 | ||||
NEC |
24+ |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
23+ |
斜頭管 |
24800 |
正品原裝貨價格低 |
詢價 | |||
NEC |
2447 |
TO-92L |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
23+ |
TO-92L |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
FUJITS |
23+ |
TO-3 |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
NEC |
18+;19+ |
斜頭管 |
431 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
22+ |
TO-92L |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 |
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