| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter 文件：295.63 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter 文件：276.58 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr 文件：48.91 Kbytes 頁數(shù)：2 Pages | PANASONIC 松下 | PANASONIC | ||
Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio) Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter to base voltage VEBO ● I type package enabling direct soldering of the radiating fin to the p 文件：57.9 Kbytes 頁數(shù)：3 Pages | PANASONIC 松下 | PANASONIC | ||
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) 文件：91.07 Kbytes 頁數(shù)：1 Pages | ROHM 羅姆 | ROHM | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ? Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) ? High DC Current Gain : hFE= 1500(Min) @IC= 5A ? Low Collector Saturation Voltage APPLICATIONS ? Designed for high voltage high current amplifier applications. 文件：249.59 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general. 文件：204.44 Kbytes 頁數(shù)：4 Pages | BILIN 銀河微電 | BILIN | ||
絲?。?a target="_blank" title="Marking" href="/aaq/aar/aas/marking.html">AAQ/AAR/AAS；Package：SOT-23；Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general. 文件：1.1177 Mbytes 頁數(shù)：2 Pages | LUGUANG 魯光電子 | LUGUANG | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES Optimal for muting. 文件：1.20546 Mbytes 頁數(shù)：3 Pages | DGNJDZ 南晶電子 | DGNJDZ | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Optimal for muting. 文件：751.07 Kbytes 頁數(shù)：2 Pages | HTSEMI 金譽(yù)半導(dǎo)體 | HTSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
HI.UEB_HI.BETA
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
2SC2665,2SD1207,2SD1265,
- 最大耗散功率：
1W
- 放大倍數(shù)：
β>800
- 圖片代號：
A-70
- vtest：
60
- htest：
999900
- atest：
2
- wtest：
1
技術(shù)參數(shù)
- VCEO (V)：
60
- hFE min.：
800
- hFE max.：
3200
- Pc (W)：
1
- Production Status：
Non-promotion
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ROHM |
24+ |
30000 |
詢價 | ||||
NEC |
24+ |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | |||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
23+ |
斜頭管 |
24800 |
正品原裝貨價格低 |
詢價 | |||
NEC |
2447 |
TO-92L |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEC |
23+ |
TO-92L |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
FUJITS |
23+ |
TO-3 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
NEC |
18+;19+ |
斜頭管 |
431 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
22+ |
TO-92L |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 |
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