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          首頁 >2SA17>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SA1729

          High-Speed Switching Applications

          ■ Features ● Large current capacity. ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Small-sized package.

          文件:447.8 Kbytes 頁數(shù):3 Pages

          KEXIN

          科信電子

          2SA1730

          PNP Epitaxial Planar Silicon

          Features ? Adoption of FBET , MBIT processes. ? Large current capacity. ? Low collector-to-emitter saturation voltage. ? Fast switching speed. ? Small-sized package.

          文件:57.58 Kbytes 頁數(shù):2 Pages

          KEXIN

          科信電子

          2SA1730

          High-Speed Switching Applications

          High-Speed Switching Applications Features · Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.

          文件:91.68 Kbytes 頁數(shù):3 Pages

          SANYO

          三洋

          2SA1731

          High-Speed Switching Applications

          High-Speed Switching Applications Features ? Adoption of FBET, MBIT processes. ? Large current capacity. ? Low collector-to-emitter saturation voltage. ? Fast switching speed.

          文件:97.21 Kbytes 頁數(shù):3 Pages

          SANYO

          三洋

          2SA1731

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:322.39 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1731

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:303.36 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1731-251

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:322.39 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1731-252

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:303.36 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1732

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:302.96 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2SA1732

          Silicon PNP Power Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

          文件:321.99 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          晶體管資料

          • 型號(hào):

            2SA1741

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-PNP

          • 性質(zhì):

            開關(guān)管 (S)_功率放大 (L)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            100V

          • 最大電流允許值:

            5A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            2SA1441,2SA1469,2SB595,2SB945,2SB1292,

          • 最大耗散功率:

            25W

          • 放大倍數(shù):

          • 圖片代號(hào):

            B-38

          • vtest:

            100

          • htest:

            999900

          • atest:

            5

          • wtest:

            25

          技術(shù)參數(shù)

          • Vcbo (V):

            -100

          • VCEO (V):

            -60

          • Vebo (V):

            -7

          • IC @25 °C (A):

            -5

          • VCE (sat) (V):

            -0.5

          • hFE:

            100-400

          • Pc (W):

            25

          • fT (Typical) (GHz):

            0.08

          • Cob (Typical) (pF):

            130

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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          更多2SA17供應(yīng)商 更新時(shí)間2026-1-19 10:16:00
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