| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Pb Free/RoHS Compliant ? ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 文件：291.95 Kbytes 頁數(shù)：6 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap 文件：203.34 Kbytes 頁數(shù)：4 Pages | UTC 友順 | UTC | ||
N-Channel SMD MOSFET ESD Protection Features ? RDS(ON) =3.0Ω, VGS=10V, @60V/0.50A ? RDS(ON) =4.0Ω, VGS=4.5V, @60V/0.20A ? ESD production 2kV (Human body mode) ? Advanced trench process technology. ? High density cell design for ultra low on-resistance. ? Specially designed for battery operated system, solid-state relays dr 文件：113.46 Kbytes 頁數(shù)：8 Pages | FORMOSA 美麗微半導體 | FORMOSA | ||
N-Channel MOSFET N-Channel MOSFET FEATURE ● High density cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter 文件：1.12801 Mbytes 頁數(shù)：5 Pages | JIANGSU 長電科技 | JIANGSU | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3? ? RDS(ON), [email protected],IDS@200mA=4? ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers 文件：170.76 Kbytes 頁數(shù)：5 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R 文件：263.42 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection FEATURES ? RDS(ON), VGS@10V, IDS@500mA=3Ω ? RDS(ON), [email protected], IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Driver 文件：533.04 Kbytes 頁數(shù)：4 Pages | SECOS 喜可士 | SECOS | ||
絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) 文件：624.98 Kbytes 頁數(shù)：6 Pages | YANGJIE 揚杰電子 | YANGJIE | ||
N-Channel 60-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 2 Ω ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 20 文件：1.01269 Mbytes 頁數(shù)：8 Pages | VBSEMI 微碧半導體 | VBSEMI | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R 文件：263.42 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT |
技術參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.3 A
- PD @ TA = +25°C：
0.35 W
- RDS(ON) Max @ VGS (10V)：
2000 mΩ
- RDS(ON) Max @ VGS (4.5V)：
3000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT23
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT-23 |
38963 |
FAIRCHILD/仙童全新特價2N7002K即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
Diodes |
24+ |
SOT23 |
21000 |
只做原正品!假一賠十公司現(xiàn)貨 |
詢價 | ||
AP |
24+ |
SOT23-3 |
9700 |
絕對原裝正品現(xiàn)貨假一罰十 |
詢價 | ||
CJ/長電 |
23+ |
SOT-23 |
32078 |
10年以上分銷商,原裝進口件,服務型企業(yè) |
詢價 | ||
H-DIODE海德 |
25+ |
- |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
群鑫 |
22+ |
SOT23 |
30000 |
原裝正品 一級代理 |
詢價 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-23 |
3600 |
原裝正品 可含稅交易 |
詢價 | ||
CJ/長電 |
2021+ |
SOT-23(SOT-23-3) |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
SILIKRON |
22+23+ |
SOT-23 |
85192 |
代理假一罰十全新原裝現(xiàn)貨可送貨 |
詢價 | ||
Diodes(美臺) |
24+ |
7694 |
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨 |
詢價 |
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