N-Channel Enhancement Mode Field Effect Transistor

Features ? High density cell design for Low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? Low Input/Output Leakage ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Halogen free available upon reques

文件：369.91 Kbytes 頁(yè)數(shù)：3 Pages

MCC

N-Channel SMD MOSFET ESD Protection

Features ? RDS(ON) =3.0Ω, VGS=10V, @60V/0.50A ? RDS(ON) =4.0Ω, VGS=4.5V, @60V/0.20A ? ESD production 2kV (Human body mode) ? Advanced trench process technology. ? High density cell design for ultra low on-resistance. ? Specially designed for battery operated system, solid-state relays dr

文件：113.46 Kbytes 頁(yè)數(shù)：8 Pages

FORMOSA

美麗微半導(dǎo)體

N-Channel MOSFET

N-Channel MOSFET FEATURE ● High density cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.12801 Mbytes 頁(yè)數(shù)：5 Pages

JIANGSU

長(zhǎng)電科技

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3? ? RDS(ON), [email protected],IDS@200mA=4? ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：170.76 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

N-Channel Enhancement Mode Field Effect Transistor

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Pb Free/RoHS Compliant ? ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

文件：291.95 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap

文件：203.34 Kbytes 頁(yè)數(shù)：4 Pages

UTC

友順

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：263.42 Kbytes 頁(yè)數(shù)：7 Pages

PANJIT

強(qiáng)茂

絲印：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES ? RDS(ON), VGS@10V, IDS@500mA=3Ω ? RDS(ON), [email protected], IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.04 Kbytes 頁(yè)數(shù)：4 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：624.98 Kbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

N-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 2 Ω ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 20

文件：1.01269 Mbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體