Small Signal MOSFET 200 mAmps, 60 Volts N??hannel TO??2 200 mAMPS 60 VOLTS

文件：57.66 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

絲印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

絲印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

N溝道增強模式場效應(yīng)晶體管60V，200mA，5Ω

? Voltage Controlled Small Signal Switch\n? High Saturation Current Capability\n? Rugged and Reliable\n? High Density Cell Design for Low RDS(ON);

ONSEMI

安森美半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes

美臺半導(dǎo)體

N-Channel MOSFET

JSCJ

長晶科技

N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES ? High density cell design for low RDS(ON). ? Voltage controolled small signal switch. ? Rugged and reliable. ? High saturation current capablity.

文件：67.07 Kbytes 頁數(shù)：4 Pages

KEC

KEC(Korea Electronics)

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：85.23 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

仙童半導(dǎo)體