絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

N-Channel Enhancement Mode Power Mos.FET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：358.46 Kbytes 頁數(shù)：3 Pages

SECOS

喜可士

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.39 Kbytes 頁數(shù)：4 Pages

SUTEX

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

MOSFET( N-Channel )

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：661.6 Kbytes 頁數(shù)：3 Pages

KOOCHIN

灝展電子

絲?。?a target="_blank" title="Marking" href="/2n7000021/marking.html">2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：150.26 Kbytes 頁數(shù)：2 Pages

SECELECTRONICS

上優(yōu)電子

N-Channel Enhancement Mode Field Effect Transistor

Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

文件：100.13 Kbytes 頁數(shù)：7 Pages

SYC

N-channel 60V - 1.8廓 - 0.35A - SOT23-3L / TO-92 STripFET??Power MOSFET

文件：355.46 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL-ENHANCEMENT

文件：288.83 Kbytes 頁數(shù)：3 Pages

TRSYS

Transys Electronics

Small Signal MOSFET Bare Die

文件：730.12 Kbytes 頁數(shù)：4 Pages

SS