| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog 文件：931.08 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog 文件：298.18 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote 文件：460.37 Kbytes 頁數(shù)：17 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology ? E 文件：361.32 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT-666；60 V, 340 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology 文件：379.26 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT666；60 V, 340 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：281.69 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
60V Dual N-Channel Enhancement Mode MOSFET Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications 文件：945.69 Kbytes 頁數(shù)：3 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
絲?。?a target="_blank" title="Marking" href="/x9/marking.html">X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.36 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：X9-；Package：SOT-323；60 V, 310 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology ? E 文件：164.5 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/x9/marking.html">X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro 文件：724.88 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
調(diào)幅 （AM）_調(diào)頻 （FM）
- 封裝形式：
直插封裝
- 極限工作電壓：
25V
- 最大電流允許值：
0.05A
- 最大工作頻率：
800MHZ
- 引腳數(shù)：
4
- 可代換的型號：
AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,
- 最大耗散功率：
0.075W
- 放大倍數(shù)：
- 圖片代號：
D-13
- vtest：
25
- htest：
800000000
- atest：
0.05
- wtest：
0.075
技術(shù)參數(shù)
- Vdss(V)：
700
- Vgss(V)：
30
- Id(A)：
2
- Package：
TO-220TO-220FTO-...
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
25+23+ |
TO-220 |
25565 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
UTC/友順 |
2022+ |
TO-220F |
7500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
UTC/友順 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
DIODES/美臺系列原裝 |
2020+ |
SOT-23 |
990000 |
原裝正品,誠信經(jīng)營。 |
詢價 | ||
恩XP |
SOT-23 |
27000 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
DIODES |
24+ |
SOT323 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
TE/泰科 |
23+ |
NA/原裝 |
82985 |
代理-優(yōu)勢-原裝-正品-現(xiàn)貨*期貨 |
詢價 | ||
ON |
23+ |
SOT-23 |
3000 |
全新原裝正品!一手貨源價格優(yōu)勢! |
詢價 |
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