| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES ? High density cell design for low RDS(ON). ? Voltage controolled small signal switch. ? Rugged and reliable. ? High saturation current capablity. 文件：561.25 Kbytes 頁數(shù)：4 Pages | KEC KEC(Korea Electronics) | KEC | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Motor Control ? Power Management Functions Features and Benefits ? N-Cha 文件：154.02 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa 文件：148.68 Kbytes 頁數(shù)：6 Pages | UTC 友順 | UTC | ||
絲?。?a target="_blank" title="Marking" href="/7002a./marking.html">7002A.；Package：SOT-23；MOSFET Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. 文件：573.64 Kbytes 頁數(shù)：6 Pages | COMCHIP 典琦 | COMCHIP | ||
絲印：NJ；Package：SOT-23；N-Channel Enhancement MOSFET High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) 文件：965.81 Kbytes 頁數(shù)：5 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/qk/marking.html">QK；Package：DFN1110D-3；60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 文件：301.46 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：D3；Package：SOT1268；60 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench 文件：317.65 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance 文件：240.84 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導(dǎo)體 | DIODES |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
調(diào)幅 （AM）_調(diào)頻 （FM）
- 封裝形式：
直插封裝
- 極限工作電壓：
25V
- 最大電流允許值：
0.05A
- 最大工作頻率：
800MHZ
- 引腳數(shù)：
4
- 可代換的型號：
AF106,AF109R,AF139,AF239(S),AF306,2N3283,2N3284,2N3285,2N3286,
- 最大耗散功率：
0.075W
- 放大倍數(shù)：
- 圖片代號：
D-13
- vtest：
25
- htest：
800000000
- atest：
0.05
- wtest：
0.075
技術(shù)參數(shù)
- Vdss(V)：
700
- Vgss(V)：
30
- Id(A)：
2
- Package：
TO-220TO-220FTO-...
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
25+23+ |
TO-220 |
25565 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
UTC/友順 |
2022+ |
TO-220F |
7500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
UTC/友順 |
20+ |
TO-220F |
7500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
24+ |
N/A |
69000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
VISHAY |
25+ |
SOT23-3 |
1560 |
強調(diào)現(xiàn)貨,隨時查詢 |
詢價 | ||
PH |
23+ |
SOT23 |
50000 |
全新原裝環(huán)保倉庫現(xiàn)貨 |
詢價 | ||
SILIC |
10+ |
DIP-4 |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
恩XP |
SOT-23 |
27000 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
DIODES |
01+ |
SOT23 |
1200 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 |
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