絲?。?a target="_blank" title="Marking" href="/702/marking.html">702*；Package：SOT-23；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.9 Kbytes 頁數(shù)：4 Pages

SUTEX

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：1.24227 Mbytes 頁數(shù)：5 Pages

SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features ? Voltage Controlled Small Signal Switch ? High Density Cell Design for Low RDS(ON) ? Rugged and Reliable ? High Saturation Current Capablity ? RoHS Compliance

文件：245.32 Kbytes 頁數(shù)：7 Pages

TAITRON

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.61 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚杰電子

Mosfet (N-Channel)

Features ◇ High density cell design for low RDS(ON) ◇ Voltage controlled small signal switch ◇ Rugged and reliable ◇ High saturation current capability

文件：825.43 Kbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Feature ● 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management in Desktop C

文件：153.75 Kbytes 頁數(shù)：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：486.19 Kbytes 頁數(shù)：2 Pages

WINNERJOIN

永而佳

Small Signal MOSFET Transistor

FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

文件：253.32 Kbytes 頁數(shù)：4 Pages

MAKOSEMI

美科半導(dǎo)體

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. Applications Intended for use in general purpose switching and phase control applications.

文件：901.72 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子