| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N6059 | NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 文件：65.019 Kbytes 頁數(shù)：2 Pages | MICROSEMI 美高森美 | MICROSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general?purpose amplifier and low frequency switching applications. ? High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc ? Collector?Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 文件：190.17 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS 文件：195.37 Kbytes 頁數(shù)：4 Pages | BOCA 博卡 | BOCA | |
2N6059 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. 文件：495.5 Kbytes 頁數(shù)：2 Pages | CENTRAL | CENTRAL | |
2N6059 | POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：188.54 Kbytes 頁數(shù)：4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar 文件：223.22 Kbytes 頁數(shù)：5 Pages | COMSET | COMSET | |
2N6059 | isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 300 (Min) @ IC = 5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amp 文件：294.98 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications 文件：114.5 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl+Di
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
12A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號：
BDV65A,BDW83C,BDX65B,BDX67B,BDX87C,FH9D,MJ4035,TIP141,TIP642,2SC1830,2SD685,
- 最大耗散功率：
150W
- 放大倍數(shù)：
β>750
- 圖片代號：
E-44
- vtest：
100
- htest：
999900
- atest：
12
- wtest：
150
產(chǎn)品屬性
- 產(chǎn)品編號：
2N6059
- 制造商：
STMicroelectronics
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個
- 包裝：
剪切帶（CT）帶盒（TB）
- 晶體管類型：
NPN - 達林頓
- 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：
3V @ 120mA，12A
- 電流 - 集電極截止（最大值）：
1mA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
750 @ 6A，3V
- 頻率 - 躍遷：
4MHz
- 工作溫度：
200°C（TJ）
- 安裝類型：
底座安裝
- 封裝/外殼：
TO-204AA，TO-3
- 供應(yīng)商器件封裝：
TO-3
- 描述：
TRANS NPN DARL 100V 12A TO3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
25+ |
3000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
25+ |
3000 |
公司現(xiàn)貨庫存 |
詢價 | ||||
STMicroelectronics |
25+ |
N/A |
11543 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
SOLIDSTATE |
24+/25+ |
490 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
STM |
25+ |
TO-3 |
75 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
STM |
24+ |
N/A |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
MOTOROLA |
24+ |
TO-3 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Central |
2000 |
TO-3 |
20 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
MOTOROLA |
專業(yè)鐵帽 |
TO-3 |
1500 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 |
