絲印：20N；Package：SOT-363；SiGe:C Low Noise Amplifier with Bypass Switch

文件：1.11395 Mbytes 頁數(shù)：24 Pages

恩XP

絲印：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.2281 Mbytes 頁數(shù)：6 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/20n06/marking.html">20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.3482 Mbytes 頁數(shù)：6 Pages

EVVOSEMI

翊歐

絲印：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.75 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導體

絲?。?a target="_blank" title="Marking" href="/20n03l/marking.html">20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOS Buck converter series Feature ? N-Channel ? Logic Level ? Low On-Resistance RDS(on) ? Excellent Gate Charge x RDS(on) product (FOM) ? Superior thermal resistance ? 175°C operating temperature ? Avalanche rated ? dv/dt rated ? Ideal for fast switching buck converters

文件：158.76 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/20n03l/marking.html">20N03L；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature ? N-Channel ? Logic Level ? Excellent Gate Charge x RDS(on) product (FOM) ? 175°C operating temperature ? dv/dt rated ? Ideal for fast switching buck converters ? Pb.free lead plating, RoHS compliant

文件：9.34933 Mbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/20n03l/marking.html">20N03L；Package：TO-252；30V N-Channel MOSFET

Features ? Ultra?Low RDS(on), Single Base, Advanced Technology ? SPICE Parameters Available ? Diode is Characterized for use in Bridge Circuits ? IDSS and V (on)Specified at Elevated Temperatures ? High Avalanche Energy Specified Typical Applications ? Power Supplies ? Inductive Loads ?

文件：447.31 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/20n03l/marking.html">20N03L；Package：TO-252；30V N-Channel MOSFET

Features ? Ultra?Low RDS(on), Single Base, Advanced Technology ? SPICE Parameters Available ? Diode is Characterized for use in Bridge Circuits ? IDSS and V (on)Specified at Elevated Temperatures ? High Avalanche Energy Specified Typical Applications ? Power Supplies ? Inductive Loads ?

文件：447.31 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/20n06c/marking.html">20N06C；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：187.41 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/20n06w/marking.html">20N06W；Package：SO-8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：187.41 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體