絲印：1D2；Package：UQFN；5-V Bidirectional 8:1, 1-Channel Multiplexer, 5-V Bidirectional 4:1, 2-Channel Multiplexer

文件：1.31453 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

絲印：1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d26/marking.html">1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d26/marking.html">1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d2n04cl/marking.html">1D2N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK8 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：374.42 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d24c/marking.html">1D24C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features ? Small Footprint (5x7 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? TCPAK57 5x7 Top Cool Package ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：327.79 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d2n04cl/marking.html">1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：342.62 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d26/marking.html">1D26；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 頁數(shù)：40 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d26/marking.html">1D26；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 頁數(shù)：51 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d26/marking.html">1D26；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 頁數(shù)：51 Pages

TI

德州儀器