絲?。?strong>1D2N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK8 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：374.42 Kbytes 頁數(shù)：7 Pages

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絲?。?strong>1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：342.62 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?strong>1D2N04CL；Package：LFPAK8；Power MOSFET 40 V, 1.2 m, 237 A, Single N??hannel

文件：356.69 Kbytes 頁數(shù)：7 Pages

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絲印：1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single, N-Channel 40 V, 1.1 m, 258 A

文件：343.77 Kbytes 頁數(shù)：7 Pages

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安森美半導(dǎo)體