絲印：1D7；Package：VSSOP；5-V, Low-Leakage-Current, 4:1 Precision Multiplexer

文件：1.57435 Mbytes 頁(yè)數(shù)：35 Pages

TI

德州儀器

絲印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Lowers Switching Noise/EMI ? These Devices are Pb?Free and are RoHS Compliant

文件：272.08 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n4/marking.html">1D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? Battery Protection ? Synchronous Recti

文件：139.57 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n08h/marking.html">1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? Lowers Switching Noise/EMI ? These Devices are Pb?Free and are RoHS Compliant

文件：359.65 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n10mc/marking.html">1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? Lowers Switching Noise/EMI ? These Devices are Pb?Free and are RoHS Compliant

文件：271.68 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n04c/marking.html">1D7N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK8 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp

文件：363.26 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n06c/marking.html">1D7N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：258.779 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7n04c/marking.html">1D7N04C；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? LFPAK4 Package, Industry Standard ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：260.16 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d7l40y/marking.html">1D7L40Y；Package：SOT669；N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits ? 200 A

文件：307.27 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/1d7t/marking.html">1D7T；Package：SOT-23；TLV743P 300-mA, Low-Dropout Regulator

1 Features 1? Input Voltage Range: 1.4 V to 5.5 V ? Stable Operation With 1-μF Ceramic Output Capacitor ? Foldback Overcurrent Protection ? Packages: – SOT-23 (5) – X2SON (4) ? Very Low Dropout: 125 mV at 300 mA (3.3 VOUT) ? Accuracy: 1% (Typical), 1.4% (Maximum) ? Low IQ: 34 μA

文件：1.25938 Mbytes 頁(yè)數(shù)：39 Pages

TI

德州儀器