| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti 文件：155.86 Kbytes 頁數(shù)：3 Pages | UTC 友順 | UTC | ||
High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial 文件：204.45 Kbytes 頁數(shù)：12 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier 文件：630.39 Kbytes 頁數(shù)：6 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
Bipolar Junction Transistor FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies 文件：122.17 Kbytes 頁數(shù)：3 Pages | JINGDAO 晶導 | JINGDAO | ||
Bipolar Junction Transistor FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast， etc 文件：121.8 Kbytes 頁數(shù)：3 Pages | JINGDAO 晶導 | JINGDAO | ||
High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial 文件：204.45 Kbytes 頁數(shù)：12 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
- 封裝形式：
直插封裝
- 極限工作電壓：
700V
- 最大電流允許值：
4A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
75W
- 放大倍數(shù)：
β=8-40
- 圖片代號：
B-10
- vtest：
700
- htest：
999900
- atest：
4
- wtest：
75
產(chǎn)品屬性
- 產(chǎn)品編號：
13005
- 制造商：
Makeblock Co., LTD.
- 類別：
開發(fā)板，套件，編程器 > 評估板 - 擴展板，子卡
- 包裝：
散裝
- 平臺：
Me
- 類型：
傳感器
- 功能：
紅外（IR）接收器
- 內(nèi)含物：
板
- 描述：
ME INFRARED RECEIVER DECODE V3
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
華晶/藍箭 |
TO126TO220 |
80000000 |
2013 |
詢價 | |||
25+ |
TO-126 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送 |
詢價 | |||
23+ |
296000 |
詢價 | |||||
長電 |
24+ |
TO-220 |
761 |
詢價 | |||
2.25*2.25 |
24+ |
TO-220 |
50000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ST |
25+ |
TO220 |
6500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
CJ |
20+ |
TO220 |
32970 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
Makeblock |
1931+ |
N/A |
567 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
CJ/長電 |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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