Bipolar Junction Transistor

FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast， etc

文件：121.8 Kbytes 頁數(shù)：3 Pages

JINGDAO

晶導(dǎo)

低反壓集成二極管系列（Bvceo<300V）

JDsemi

深圳晶導(dǎo)

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

文件：204.45 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

文件：164.28 Kbytes 頁數(shù)：4 Pages

UTC

友順

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

文件：122.69 Kbytes 頁數(shù)：3 Pages

JINGDAO

晶導(dǎo)