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          首頁 >13005E>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          13005E

          High voltage fast-switching NPN power transistor

          Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

          文件:204.45 Kbytes 頁數(shù):12 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          13005EC

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECG-A-TM3-T

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECG-B-TM3-T

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECG-C-T60-K

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECG-D-T60-K

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECL-A-TM3-T

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECL-B-T60-K

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECL-C-T60-K

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          13005ECL-E-TM3-T

          NPN SILICON TRANSISTOR

          DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

          文件:164.28 Kbytes 頁數(shù):4 Pages

          UTC

          友順

          技術(shù)參數(shù)

          • BVceo (V):

            400

          • BVcbo (V):

            850

          • Ic (A):

            4

          • hFE (min):

            15

          • hFE (max):

            50

          • Vce (Max)(V):

            1

          • Vce (Sat)(V):

            0.5

          • Package:

            TO-251

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ST/意法
          23+
          TO-220
          5000
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
          詢價
          N/A
          TO-126
          364
          詢價
          UTC/友順
          24+
          NA
          8000
          只做原裝,歡迎詢價,量大價優(yōu)
          詢價
          FAIRCHILD/仙童
          TO-220F
          22+
          6000
          十年配單,只做原裝
          詢價
          FAIRCHILD/仙童
          23+
          TO-220F
          8400
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價
          FAIRCHILD
          25+
          TO-TO-220F
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價
          FSC
          24+
          DIP220
          10000
          詢價
          PHI
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ST
          0850+
          TO-220
          65
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          HUAJING
          14+
          TO-220F
          50
          只做原裝正品
          詢價
          更多13005E供應(yīng)商 更新時間2026-1-20 11:09:00
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