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型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IMW120R040M1H	文件：1.38658 Mbytes Page：17 Pages	絲?。?strong>12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features ? VDSS = 1200 V at Tvj = 25°C ? IDCC = 55 A at Tvj = 25°C ? RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Short circuit withstand time 3 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against parasitic turn on, 0 V turn-off gate voltage ca 文件：1.38658 Mbytes 頁數(shù)：17 Pages	INFINEON 英飛凌	INFINEON
IMZA120R040M1H	文件：1.34991 Mbytes Page：17 Pages	絲印：12M1H040；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Features ? VDSS = 1200 V at Tvj = 25°C ? IDCC = 55 A at Tvj = 25°C ? RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Short circuit withstand time 3 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against parasitic turn on, 0 V turn-off gate voltage ca 文件：1.34991 Mbytes 頁數(shù)：17 Pages	INFINEON 英飛凌	INFINEON

更多12M1H040供應商更新時間2026-1-22 15:02:00