絲?。?strong>12M2H040；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 36 A at TC = 100°C ? RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against paras

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絲?。?strong>12M2H040；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 39 A at TC = 100°C ? RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against paras

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絲?。?strong>12M2H040；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 40 A at TC = 100°C ? RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C ? Internal layout optimized for fast switching ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold vo

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絲?。?strong>12M2H040；Package：PG-TO247-4-U07；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 34 A at TC = 100°C ? RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against parasit

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