絲?。?strong>12M2H053；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 29 A at TC = 100°C ? RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against paras

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絲?。?strong>12M2H053；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 31 A at TC = 100°C ? RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against paras

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絲?。?strong>12M2H053；Package：PG-TO247-4-U07；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features ? VDSS = 1200 V at Tvj = 25°C ? IDDC = 27 A at TC = 100°C ? RDS(on) = 53 mΩ at VGS = 18 V, Tvj = 25°C ? Very low switching losses ? Overload operation up to Tvj = 200°C ? Short circuit withstand time 2 μs ? Benchmark gate threshold voltage, VGS(th) = 4.2 V ? Robust against parasit

文件：1.36385 Mbytes 頁數(shù)：17 Pages

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