絲印：010N；Package：SOT-23-3；N-Channel MOSFET

文件：370.64 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/010ne2ls/marking.html">010NE2LS；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET

Features ? Optimized for high performance Buck converter ? Very low on-resistance R DS(on) @ V GS=4.5 V ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Halogen-free according

文件：760.86 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/010n04ns/marking.html">010N04NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.05197 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/010n06ns/marking.html">010N06NS；Package：PG-TO263-7；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.06786 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/010n06n/marking.html">010N06N；Package：PG-TSON-8-3；OptiMOSTM5 Power-Transistor, 60 V

Features ? Optimized for synchronous rectification ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? 175°C rated ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? Higher solder joint reliability due to enlarged source interconnection

文件：988.7 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/010n04cl/marking.html">010N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：339.45 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/010n04cl/marking.html">010N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：332.09 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：010N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：336.85 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/010n06cl/marking.html">010N06CL；Package：LFPAK33；MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：340.21 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/010n04lt/marking.html">010N04LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 40 V

文件：1.43718 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌