絲?。?strong>010N04C；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：336.85 Kbytes 頁(yè)數(shù)：7 Pages

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絲印：010N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：339.45 Kbytes 頁(yè)數(shù)：7 Pages

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安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/010n04cl/marking.html">010N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：332.09 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/010n04cl/marking.html">010N04CL；Package：LFPAK4；Power MOSFET 40 V, 10.3 m, 38 A, Single N??hannel

文件：321.59 Kbytes 頁(yè)數(shù)：7 Pages

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安森美半導(dǎo)體