絲?。?strong>011N；Package：WDFNW6；MOSFET ??Power, Single N-Channel 40 V, 11 m, 37 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：170.89 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?strong>011N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：163.85 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/011n04ns/marking.html">011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.04643 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：011N03F2；Package：PG-TO220-3；MOSFET StrongIRFET?2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：838.2 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/011n04ns/marking.html">011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：985.64 Kbytes 頁數(shù)：11 Pages

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英飛凌

絲?。?a target="_blank" title="Marking" href="/011n08n5/marking.html">011N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? Ideal for high frequency switching and sync. rec.

文件：1.34933 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：011N30GU；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE011N30GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features

文件：927.37 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲印：011N04C；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：341.08 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/011n03lt/marking.html">011N03LT；Package：TDSON-8FL；OptiMOSTM Power-MOSFET, 30 V

文件：1.59225 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/011n03l5/marking.html">011N03L5；Package：PG-TDSON-8；Optimized for high performance Buck converter

文件：1.32642 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌