絲?。?strong>001100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

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絲?。?a target="_blank" title="Marking" href="/00110000/marking.html">00110000；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲印：00110011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲?。?a target="_blank" title="Marking" href="/00110001/marking.html">00110001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：955.98 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/00110010/marking.html">00110010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = open

文件：615.64 Kbytes 頁數(shù)：12 Pages

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