絲?。?a target="_blank" title="Marking" href="/00101000/marking.html">00101000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143TMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲?。?a target="_blank" title="Marking" href="/00101001/marking.html">00101001；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：962.15 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/00101010/marking.html">00101010；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

Features and benefits ? 100 mA output current capability ? Reduces component count ? Built-in bias resistors ? Reduces pick and place costs ? Simplifies circuit design ? AEC-Q101 qualified ? Leadless ultra small SMD plastic package ? Low package height of 0.37 mm

文件：837.43 Kbytes 頁數(shù)：12 Pages

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絲印：00101011；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.87 Kbytes 頁數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/00101110/marking.html">00101110；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144WMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：834.24 Kbytes 頁數(shù)：12 Pages

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絲印：00101000；Package：DFN1006D-2；20 V, 0.5 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits ? Average fo

文件：243.54 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/001001/marking.html">001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/001011/marking.html">001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

文件：1.28155 Mbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/00100000/marking.html">00100000；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：960.46 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/00100001/marking.html">00100001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

文件：616.56 Kbytes 頁數(shù)：12 Pages

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