6.35mm Pitch MLX Power Connector, 2.13mm Contact Diameter, Vertical

文件：41.47 Kbytes 頁數(shù)：2 Pages

MOLEX

莫仕

6.35mm Pitch MLX Power Connector Header, Vertical, 6 Circuits, Polyester 94V-0

文件：41.27 Kbytes 頁數(shù)：2 Pages

MOLEX

莫仕

6.35mm (.250) Pitch MLX??Power Connector Header, Vertical, 6 Circuits, Polyester 94V-0, Tin (Sn) Plating, White

文件：374.21 Kbytes 頁數(shù)：4 Pages

MOLEX

莫仕

6.35mm Pitch MLX Power Connector Header, Vertical, 6 Circuits, Polyester 94V-0

文件：41.27 Kbytes 頁數(shù)：2 Pages

MOLEX

莫仕

絲?。?a target="_blank" title="Marking" href="/001001/marking.html">001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits ? General-purpose transistors ? Three current gain selections ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? AEC-Q101 qualified

文件：1.28054 Mbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/001011/marking.html">001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits ? General-purpose transistors ? Three current gain selections ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? AEC-Q101 qualified

文件：1.28054 Mbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲印：001010；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits ? Very low collector-

文件：726.66 Kbytes 頁數(shù)：17 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/00100010/marking.html">00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/00100101/marking.html">00100101；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.13 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/00100111/marking.html">00100111；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：839.15 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世