絲?。?a target="_blank" title="Marking" href="/00100010/marking.html">00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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NEXPERIA

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PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. ? 100 mA output current capability\n? Reduces component count\n? Built-in bias resistors\n? Reduces pick and place costs\n? Simplifies circuit design\n? AEC-Q101 qualified\n? Leadless ultra small SMD plastic package\n? Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.

PNP resistor-equipped transistors

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES ? Built-in bias resistors ? Simplified circuit design ? Reduction of component count ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and amplif

文件：102.48 Kbytes 頁數(shù)：14 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver.

文件：420.53 Kbytes 頁數(shù)：15 Pages

NEXPERIA

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