絲?。?strong>000101；Package：DFN1010B-6；60 V, dual N-channel Trench MOSFET

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絲印：00010111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲?。?a target="_blank" title="Marking" href="/00010101/marking.html">00010101；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

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絲?。?a target="_blank" title="Marking" href="/00010110/marking.html">00010110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：961.2 Kbytes 頁數(shù)：12 Pages

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絲印：00010111；Package：SOT8001；30 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features ? Low threshold voltage ? Very fast switching ? Trench MOSFET technology ? ElectroStatic

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