絲印：000110；Package：DFN1010D-3；Protection against high surge currents in ultra small DFN1010D-3 package

文件：754.54 Kbytes 頁(yè)數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/00011001/marking.html">00011001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias transistors ■

文件：845.94 Kbytes 頁(yè)數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/00011000/marking.html">00011000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：747.39 Kbytes 頁(yè)數(shù)：12 Pages

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絲印：00011001；Package：SOT8001；30 V, P-channel Trench MOSFET

description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSFET technology ?

文件：277.75 Kbytes 頁(yè)數(shù)：14 Pages

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絲印：00011010；Package：DFN1006B-3；Ultra low capacitance bidirectional double ESD protection array

文件：208.03 Kbytes 頁(yè)數(shù)：10 Pages

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Miniature Fuse, 5 x 20 mm, Quick-Acting F, H, 250 VAC

文件：338.2 Kbytes 頁(yè)數(shù)：2 Pages

SCHURTER

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Miniature Fuse, 6.3 x 32 mm, Quick-Acting F, Sand, 250 VAC

文件：265.98 Kbytes 頁(yè)數(shù)：2 Pages

SCHURTER

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