| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>0000；Package：SOT883B；60 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Trench MOSFET technology ? ESD prote 文件：1.4098 Mbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?strong>0000；Package：SOT883B；30 V, single N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Very fast switching ? Low threshold voltage ? Trench MOSFET t 文件：259.43 Kbytes 頁(yè)數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?strong>0000；Package：SOT883B；30 V, single P-channel Trench MOSFET 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Low threshold voltage ? Trench MOSFE 文件：1.65853 Mbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?strong>0000；Package：SOD882D；Ultra low capacitance unidirectional ESD protection diode 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic packag 文件：755.57 Kbytes 頁(yè)數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：0000；Package：DFN1006D-2；Ultra low capacitance unidirectional ESD protection diode 1. General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package 文件：230.48 Kbytes 頁(yè)數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?strong>0000；Package：DFN1006D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side p 文件：244.18 Kbytes 頁(yè)數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?strong>0000；Package：SOT883B；20 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Low threshold voltage ? Trench MOSFE 文件：1.55927 Mbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：0000；Package：SOT883B；20 V, single P-channel Trench MOSFET 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Low threshold voltage ? Trench MOSFE 文件：1.56355 Mbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/00001101/marking.html">00001101；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified 文件：988.04 Kbytes 頁(yè)數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/00001110/marking.html">00001110；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified 文件：988.04 Kbytes 頁(yè)數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA |
詳細(xì)參數(shù)
- 型號(hào)：
0000
- 功能描述：
ESD 抑制器 10 V 1.75 pF
- RoHS：
否
- 制造商：
STMicroelectronics
- 通道：
8 Channels
- 擊穿電壓：
8 V
- 電容：
45 pF
- 端接類型：
SMD/SMT
- 封裝/箱體：
uQFN-16 功率耗散
- 工作溫度范圍：
- 40 C to + 85 C
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Nexperia/安世 |
24+ |
SOD882 |
120524 |
原裝正品,現(xiàn)貨庫(kù)存,1小時(shí)內(nèi)發(fā)貨 |
詢價(jià) | ||
恩XP |
25+ |
DFN |
32360 |
NXP/恩智浦全新特價(jià)PESD5V0X1UALD即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
恩XP |
1908+ |
QFN |
30000 |
全新原裝公司現(xiàn)貨
|
詢價(jià) | ||
恩XP |
23+ |
QFN |
30000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
恩XP |
2021+ |
DFN1006 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
NEXPERIA/安世 |
25+ |
DFN1006 |
9800 |
原廠原裝假一賠十 |
詢價(jià) | ||
恩XP |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
恩XP |
24+ |
QFN |
12000 |
原裝正品 假一罰十 |
詢價(jià) | ||
恩XP |
25+ |
N/A |
18798 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。 |
詢價(jià) | ||
NEXPERIA |
22+ |
原廠 |
9600 |
詢價(jià) |
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