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          首頁(yè) >WSB>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          WSBE8518

          Power Metal Strip? Shunt Resistor, Low TCR (Down to ppm/°C), Very Low Value (Down to 15 μΩ)

          FEATURES ? High power capability that enables current sensing to 1825 A ? Proprietary processing technique produces extremely low resistance values ? All welded construction ? Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) ? Very low

          文件:150.47 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          WSBE8518

          Power Metal Strip? Shunt Resistor, Low TCR (Down to ppm/°C), Very Low Value (Down to 15 μΩ)

          FEATURES ? High power capability that enables current sensing to 1825 A ? Proprietary processing technique produces extremely low resistance values ? All welded construction ? Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) ? Very low

          文件:150.47 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          WSBE8536

          Power Metal Strip? Shunt Resistor, Low TCR (Down to ppm/°C), Very Low Value (Down to 15 μΩ)

          FEATURES ? High power capability that enables current sensing to 1825 A ? Proprietary processing technique produces extremely low resistance values ? All welded construction ? Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) ? Very low

          文件:150.47 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          WSBE8536

          Power Metal Strip? Shunt Resistor, Low TCR (Down to ppm/°C), Very Low Value (Down to 15 μΩ)

          FEATURES ? High power capability that enables current sensing to 1825 A ? Proprietary processing technique produces extremely low resistance values ? All welded construction ? Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) ? Very low

          文件:150.47 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          WSB06200AT

          High Voltage Power Schottky Rectifier

          文件:133.89 Kbytes 頁(yè)數(shù):3 Pages

          WEITRON

          WSB10100T

          Power Schottky Barrier Rectifier

          文件:543.69 Kbytes 頁(yè)數(shù):3 Pages

          WILLSEMIWill Semiconductor Co.,Ltd.

          韋爾股份上海韋爾半導(dǎo)體股份有限公司

          WSB10100T-3/T

          絲印:WSB10100TOYW;Package:TO-220;Power Schottky Barrier Rectifier

          文件:543.69 Kbytes 頁(yè)數(shù):3 Pages

          WILLSEMIWill Semiconductor Co.,Ltd.

          韋爾股份上海韋爾半導(dǎo)體股份有限公司

          WSB10100T-3SLASHT

          絲印:WSB10100TOYW;Package:TO-220;Power Schottky Barrier Rectifier

          文件:543.69 Kbytes 頁(yè)數(shù):3 Pages

          WILLSEMIWill Semiconductor Co.,Ltd.

          韋爾股份上海韋爾半導(dǎo)體股份有限公司

          WSB1151

          PNP EPITAXIAL SILICON TRANSISTOR

          文件:142.98 Kbytes 頁(yè)數(shù):2 Pages

          ETCList of Unclassifed Manufacturers

          未分類(lèi)制造商

          WSB20100T

          Power Schottky Barrier Rectifier

          文件:261.22 Kbytes 頁(yè)數(shù):3 Pages

          WILLSEMIWill Semiconductor Co.,Ltd.

          韋爾股份上海韋爾半導(dǎo)體股份有限公司

          技術(shù)參數(shù)

          • 應(yīng)用:

            汽車(chē)級(jí)AEC-Q200

          • 成分:

            金屬元素

          • 電阻:

            100 μO(píng)hms

          • 容差:

            ±5%

          • 功率 (W):

            36W

          • 溫度系數(shù):

            ±10ppm/°C

          • 工作溫度:

            -65°C ~ 170°C

          • 安裝類(lèi)型:

            分流器夾具,60mm 間距

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          更多WSB供應(yīng)商 更新時(shí)間2026-1-18 15:01:00
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