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          首頁 >VT10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VT10202C_V01

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology Gen 2 ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

          文件:159.73 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT10202C-M3SLASH4W

          Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

          ? Trench MOS Schottky technology Gen 2 ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and

          文件:159.09 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045BP_V01

          Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Low profile package ? Ideal for automated placement ? Trench MOS Schottky technology ? Low power losses, high efficiency ? Low forward voltage drop ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definitions of compliance please see

          文件:109.97 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045C

          Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

          文件:142.6 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045C

          Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to I

          文件:124.87 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045C_V01

          Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

          文件:142.6 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045CBP

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay

          文件:135.72 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045CBP_V01

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay

          文件:135.72 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1045CBP-M3SLASH4W

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

          ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application

          文件:135.08 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VT1060C

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

          文件:130.58 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

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          • 產(chǎn)品類別:

            Headsets

          供應(yīng)商型號品牌批號封裝庫存備注價格
          VOLTERRA
          13+
          6184
          原裝分銷
          詢價
          16+
          QFN
          2500
          進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
          詢價
          VOLT
          24+
          BGA
          6868
          原裝現(xiàn)貨,可開13%稅票
          詢價
          VOLTERRA
          24+
          BGA
          4481
          詢價
          VOLTERRA
          23+
          QLP20
          50000
          原裝正品,假一罰十
          詢價
          VOLTERRA
          24+
          QFN
          5989
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
          詢價
          VISHAY
          17+
          TO220-3
          6200
          詢價
          VOLTERRA
          1645+
          ?
          7500
          只做原裝進(jìn)口,假一罰十
          詢價
          VOLTERRA
          25+
          4500
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          Vishay
          24+
          NA
          3502
          進(jìn)口原裝正品優(yōu)勢供應(yīng)
          詢價
          更多VT10供應(yīng)商 更新時間2026-1-18 9:01:00
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