| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology Gen 2 ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2 文件:159.73 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A ? Trench MOS Schottky technology Gen 2 ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and 文件:159.09 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ? Low profile package ? Ideal for automated placement ? Trench MOS Schottky technology ? Low power losses, high efficiency ? Low forward voltage drop ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definitions of compliance please see 文件:109.97 Kbytes 頁數(shù):4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件:142.6 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to I 文件:124.87 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件:142.6 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay 文件:135.72 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay 文件:135.72 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application 文件:135.08 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件:130.58 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- 產(chǎn)品類別:
Headsets
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VOLTERRA |
13+ |
6184 |
原裝分銷 |
詢價 | |||
16+ |
QFN |
2500 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | |||
VOLT |
24+ |
BGA |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
VOLTERRA |
24+ |
BGA |
4481 |
詢價 | |||
VOLTERRA |
23+ |
QLP20 |
50000 |
原裝正品,假一罰十 |
詢價 | ||
VOLTERRA |
24+ |
QFN |
5989 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
VISHAY |
17+ |
TO220-3 |
6200 |
詢價 | |||
VOLTERRA |
1645+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價 | ||
VOLTERRA |
25+ |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | |||
Vishay |
24+ |
NA |
3502 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 |
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